Staff Memory Design Engineer DRAM & HBM Innovation
micron technologyRichardson (TX)
Staff Memory Design Engineer DRAM & HBM Innovation
Posted yesterday
micron technologyRichardson (TX)
SENIORITY
Lead
About the role
Micron Technology is seeking a Staff Design Engineer to design, simulate and optimize DRAM circuits, collaborating with global teams to deliver manufacturable, high‑quality memory products. You will drive innovation in future memory generations and contribute to silicon‑to‑system development.
The role emphasizes CMOS circuit design, verification, and layout leadership, with responsibilities spanning schematic edits, floorplanning, and design reviews to ensure performance and cost efficiency.
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