Lead Memory Design Engineer: DRAM & HBM
micron technologyRichardson (TX)
Lead Memory Design Engineer: DRAM & HBM
Posted yesterday
micron technologyRichardson (TX)
SENIORITY
Lead
About the role
Micron Technology in Texas is seeking a Principal Design Engineer to architect high‑performance DRAM circuits for advanced memory nodes. You will lead layout, verification, and silicon validation with cross‑functional teams to deliver scalable, manufacturable solutions.
The role requires strong CMOS/VLSI background and hands‑on Cadence Virtuoso experience, plus circuit simulation using FINESIM, HSPICE, and Verilog.
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