Quantum Topological Qubit Integration
$85,000.00 - $146,000.00
ApplyQuantum Topological Qubit Integration
Posted 17 days ago
SENIORITY
Lead
SALARY
$85,000.00 - $146,000.00
About the role
- Support integration of topological quantum devices, including III‐V heterostructures, superconducting materials, and hybrid material systems
- Develop and execute process integration flows across device modules, BEOL interconnect, and heterogeneous integration schemes
- Work with epitaxy and materials teams to ensure integration of III‐V layers, superconductors, and interfaces meets device performance requirements
- Contribute to integration of device architectures supporting qubit operation as well as cryogenic read-out and control circuitry
- Analyze device and process interactions, including defectivity, variability, contamination, and interface quality
- Execute DOE (Design of Experiments) and analyze electrical and physical characterization data to guide process optimization
- Support development of superconducting interconnect and low-loss BEOL wiring for operation at cryogenic temperatures
- Collaborate with device engineering to ensure alignment between device physics requirements (e.g., coherence, noise, thermal performance) and integration
- Participate in yield-learning activities, including root-cause analysis and corrective action implementation
- Contribute to definition and tracking of technical milestones, including performance, variability, and reliability metrics
- Work cross-functionally with process, materials, packaging, and design enablement teams to ensure successful end-to-end integration
- Document integration flows, assumptions, and technical learnings to support scalable development and knowledge transfer
- BS or MS in Electrical Engineering, Physics, Materials Science, or related field 5+ years of experience in semiconductor process or integration engineering
- Experience with semiconductor device physics and materials interactions
- Familiarity with advanced materials systems (e.g., III‐V semiconductors, superconductors, or related materials)
- Experience analyzing electrical or physical characterization data
- Strong analytical, problem-solving, and debugging skills
- Effective communication skills
- Experience with epitaxial growth or III‐V heterostructures (e.g., MBE, MOCVD)
- Background in superconducting or hybrid semiconductor devices
- Familiarity with topological quantum devices or related research areas
- Experience with BEOL integration, interconnect technologies, or packaging
- Experience with cryogenic device behavior and measurements.
- Experience with DOE methodologies, yield analysis, or variability modeling
- Experience working in advanced R&D or emerging technology environments
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